Photoelectrochemical Transients for Chlorine/Hypochlorite Formation at "Roll-On" Nano-WO3 Film Electrodes
Identifieur interne : 000733 ( Main/Repository ); précédent : 000732; suivant : 000734Photoelectrochemical Transients for Chlorine/Hypochlorite Formation at "Roll-On" Nano-WO3 Film Electrodes
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Abstract
Commercial nano-WO3 (10-100 nm average particle size) is dispersed in n-hexanol and applied to tin-doped indium oxide (ITO) substrates in a simple "roll-on" process. As-deposited and annealed (500 °C) films are compared and shown to be photoactive for the formation of hypochlorite in neutral aqueous NaCl (e.g., seawater). Annealing at 500 °C in air improves photocurrents most likely due to improved interparticle charge transport (e.g., removal of hydration or n-hexanol surface layers). In phototransients (interpreted here in the limiting case of a weakly associated nanoparticle aggregate as opposed to the limiting case of a single-crystal semiconductor), evidence for the presence of both holes (as O(-I), fast moving) and electrons (as W(V), slow moving) is obtained in particular in as-deposited films. Bipotentiostat experiments reveal the presence of chlorine as a reaction intermediate close to the photoanode when immersed in 3 M NaCl. A "molecular conduit" effect with adsorbed Co(II/III) sepulchrate is observed to significantly enhance the photocurrents at as-deposited electrodes (but not at annealed electrodes).
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<author><name sortKey="Ahmed, Safeer" uniqKey="Ahmed S">Safeer Ahmed</name>
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<author><name sortKey="Hassan, Ibrahim A I" uniqKey="Hassan I">Ibrahim A. I. Hassan</name>
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<author><name sortKey="Roy, Hayley" uniqKey="Roy H">Hayley Roy</name>
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<author><name sortKey="Marken, Frank" uniqKey="Marken F">Frank Marken</name>
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<front><div type="abstract" xml:lang="en">Commercial nano-WO<sub>3</sub>
(10-100 nm average particle size) is dispersed in n-hexanol and applied to tin-doped indium oxide (ITO) substrates in a simple "roll-on" process. As-deposited and annealed (500 °C) films are compared and shown to be photoactive for the formation of hypochlorite in neutral aqueous NaCl (e.g., seawater). Annealing at 500 °C in air improves photocurrents most likely due to improved interparticle charge transport (e.g., removal of hydration or n-hexanol surface layers). In phototransients (interpreted here in the limiting case of a weakly associated nanoparticle aggregate as opposed to the limiting case of a single-crystal semiconductor), evidence for the presence of both holes (as O(-I), fast moving) and electrons (as W(V), slow moving) is obtained in particular in as-deposited films. Bipotentiostat experiments reveal the presence of chlorine as a reaction intermediate close to the photoanode when immersed in 3 M NaCl. A "molecular conduit" effect with adsorbed Co(II/III) sepulchrate is observed to significantly enhance the photocurrents at as-deposited electrodes (but not at annealed electrodes).</div>
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<fA14 i1="02"><s1>Department of Chemistry, Quaid-i-Azam University</s1>
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(10-100 nm average particle size) is dispersed in n-hexanol and applied to tin-doped indium oxide (ITO) substrates in a simple "roll-on" process. As-deposited and annealed (500 °C) films are compared and shown to be photoactive for the formation of hypochlorite in neutral aqueous NaCl (e.g., seawater). Annealing at 500 °C in air improves photocurrents most likely due to improved interparticle charge transport (e.g., removal of hydration or n-hexanol surface layers). In phototransients (interpreted here in the limiting case of a weakly associated nanoparticle aggregate as opposed to the limiting case of a single-crystal semiconductor), evidence for the presence of both holes (as O(-I), fast moving) and electrons (as W(V), slow moving) is obtained in particular in as-deposited films. Bipotentiostat experiments reveal the presence of chlorine as a reaction intermediate close to the photoanode when immersed in 3 M NaCl. A "molecular conduit" effect with adsorbed Co(II/III) sepulchrate is observed to significantly enhance the photocurrents at as-deposited electrodes (but not at annealed electrodes).</s0>
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